Origins of structural defects in BF/sub 2//sup +/-implanted and rapid-thermally-annealed silicon: conditions for defect-free regrowth

Conference · Sun Jul 01 04:00:00 EDT 1984

OSTI ID:6595800

Sands, T; Washburn, J; Myers, E; Sadana, D K

The rapid thermal annealing behavior of BF/sub 2//sup +/-implanted silicon pre-amorphized with Si/sup +/ and Ge/sup +/ has been investigated with conventional and high-resolution cross-sectional transmission electron microscopy, and secondary-ion mass spectrometry. Three distinct layers of defects (types I, II and III) are identified. Fine clusters (type III) in the near-surface regions of both Si/sup +/ and Ge/sup +/ pre-amorphized samples are shown to be related to fluorine. In addition, models for the nucleation of interstitial dislocation loops (type I) and hairpin dislocations (type II) are presented. These models and the experimental results suggest that the densities of type I and type II defects can be reduced by pre-amorphizing with Ge/sup +/ instead of Si/sup +/. Furthermore, defect-free regrowth is demonstrated for samples which are pre-amorphized with Ge/sup +/ and rapid-thermally annealed at 1150/sup 0/C.

• Research Organization: Lawrence Berkeley Lab., CA (USA); North Carolina State Univ., Raleigh (USA). Dept. of Materials Engineering; Microelectronics Center of North Carolina, Research Triangle Park (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6595800
• Report Number(s): LBL-18045; CONF-840760-9; ON: DE84016060
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
BORON COMPOUNDS
BORON FLUORIDES
CHARGED PARTICLES
ELECTRON MICROSCOPY
ELEMENTS
FLUORIDES
FLUORINE COMPOUNDS
GERMANIUM IONS
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
MICROSCOPY
SEMIMETALS
SILICON
SILICON IONS
TRANSMISSION ELECTRON MICROSCOPY