Phonon-sideband MO-CVD quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructure laser

Journal Article · Sun Apr 15 00:00:00 EST 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90843· OSTI ID:6476785

Holonyak, N Jr; Kolbas, R M; Laidig, W D; Altarelli, M; Dupuis, R D; Dapkus, P D

Laser operation (4.2--300 /sup 0/K) of multiple-quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructures on a phonon (LO) sideband approx.36 meV below the lowest confined-particle transitions is described. Phonon-sideband laser data are presented on two different metalorganic chemical-vapor-deposited (MO-CVD) quantum-well heterostructures with four GaAs active regions (L/sub z/approx.50 and approx.90 A) coupled by three Al/sub x/Ga/sub 1-x/As (xapprox.0.35) barriers.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6476785
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 34:8
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
PHONONS
ALUMINIUM ARSENIDES
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
ISOLATED VALUES
LOW TEMPERATURE
MEDIUM TEMPERATURE
METALS
ORGANIC COMPOUNDS
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
DATA FORMS
ELEMENTS
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)