Growth and characterization of molecular beam epitaxial gallium arsenide antimonide and gallium arsenide antimonide/gallium arsenide superlattices

Thesis/Dissertation · Thu Jan 01 04:00:00 EST 1987

OSTI ID:6475192

Klem, J F

Described in this thesis are the molecular-beam epitaxial growth and characterization of GaAs/sub 1-x/Sb/sub x/ films and GaAs/sub 1-x/Sb/sub x//GaAs strained-layer superlattices. The methods used to reproducibly grow GaAs/sub 1-x/Sb/sub x/ across its entire composition range are detailed. The resulting film surface morphologies and microstructures are investigated by optical and electron microscopy. Significant atomic clustering and ordering effects are observed in alloys of metastable composition. Optical characterization of these alloys shows good-quality material can be obtained, but the major limitation to the quality of these materials is related to the film microstructure. Electrical measurements on unintentionally-doped layers reveal p-type conductivity due to two distinct acceptor levels. Hole mobilities are qualitatively explained in a model that assumes a dominant alloy scattering mechanism.

• Research Organization: Illinois Univ., Urbana (USA)
• OSTI ID: 6475192
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
EPITAXY
FILMS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
PNICTIDES
SUPERLATTICES