Modulation bandwidth of GaAs/AlGaAs single quantum well lasers operating at the second quantized state

Journal Article · Sun Mar 05 23:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100798· OSTI ID:6474962

Larsson, A; Lindstroem, C

The dynamic properties of GaAs/AlGaAs graded index separate confinement heterostructure single quantum well lasers have been investigated. The sublinear gain-carrier density relation imposes bandwidth limitations on these lasers. However, a considerable increase in the resonance frequency (approx.55% for a quantum well width of 140 A) was observed for lasers with cavities shorter than a certain cavity length. This discontinuous increase in bandwidth with decreasing cavity length coincides with the transition from first to second quantized state lasing and the associated recovery of the differential gain.

• Research Organization: Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S-412 96 Gothenburg, Sweden
• OSTI ID: 6474962
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
DATA
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER CAVITIES
LASERS
MODULATION
NUMERICAL DATA
OPERATION
PNICTIDES
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS