Study of strained-layer InGaAs/GaAs SQW RW laser including analysis of internal coupling of modes and antiguiding effects

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:64749

Eliseev, P G; Drakin, A E ^[1]; Beister, G; Erbert, G; Maege, J ^[2]; Konyaev, V P ^[3]

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1. Russian Academy of Sciences, Moscow (Russian Federation). P.N. Lebedev Physics Inst.
2. Ferdinand-Braun Inst., Berlin (Germany)
3. Research Inst. POLYUS, Moscow (Russian Federation)

Low threshold strained-layer InGaAs/GaAs single quantum well (SQW) lasers ({lambda} = 960--980 nm) are experimentally and analyzed on the base of a computer model for the ridge-waveguide structure. The transition from the index guiding to the gain guiding is occurring with power anomalies provided by the antiguiding contribution of excess carriers. The mode gain is found to have a maximum attainable in the index-guided mode and a negative slope range in the dependence on the carrier concentration. If the operation point reaches the gain maximum the laser action can be ceased in the index-guided mode with power drop to the spontaneous level (lasing collapse) or to lower level of an antiguided mode. Mechanisms of the mode gain decrease are considered caused by a breakdown of the lateral index-guiding and by an internal coupling of modes inside the diode chip, particularly of laser mode to cap layer mode. Latter has resonances at a phase synchronism of both modes accompanied a strong drop of the mode gain.

• OSTI ID: 64749
• Report Number(s): CONF-940142--; ISBN 0-8194-1441-7
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
COMPUTERIZED SIMULATION
DYNAMICS
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
OPERATION
PERFORMANCE
SEMICONDUCTOR LASERS
THEORETICAL DATA