Scattering loss reduction in ZnO optical waveguides by laser annealing

Journal Article · Sat Aug 01 00:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92680· OSTI ID:6468877

Dutta, S; Jackson, H E; Boyd, J T; Hickernell, F S; Davis, R L

We report successful laser annealing of ZnO optical waveguides deposited on an amorphous SiO/sub 2/ layer thermally grown on Si. A significant improvement in the optical attenuation of the fundamental mode from several dB/cm before laser annealing to as low as 0.01 dB/cm after laser annealing is observed. Scattering loss measurements for the m = 1 and m = 2 mode are also reported. We attribute the reduction in loss primarily to an improvement in the quality of the ZnO film in the region near the ZnO-SiO/sub 2/ interface.

• Research Organization: Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221
• OSTI ID: 6468877
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 39:3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
WAVEGUIDES
LASER-RADIATION HEATING
OSCILLATION MODES
ZINC OXIDES
ANNEALING
AMORPHOUS STATE
ATTENUATION
DATA
FILMS
INTERFACES
LAYERS
OPTICAL SYSTEMS
SCATTERING
SILICON OXIDES
CHALCOGENIDES
HEAT TREATMENTS
HEATING
INFORMATION
OXIDES
OXYGEN COMPOUNDS
PLASMA HEATING
SILICON COMPOUNDS
ZINC COMPOUNDS
360605* - Materials- Radiation Effects