Sulphide Ga{sub x}Ge{sub 25-x}Sb{sub 10}S{sub 65(x=0,5)} sputtered films: Fabrication and optical characterizations of planar and rib optical waveguides
- FOTON-CCLO, UMR 6082-ENSSAT, Universite Rennes 1, 22305 Lannion (France)
- Sciences Chimiques de Rennes, UMR-CNRS 6226, Equipe Verres et Ceramiques, Universite Rennes 1, 35042 Rennes (France)
- IETR-Microelectronique, Universite Rennes 1, 35042 Rennes (France)
- LARMAUR, FRE-CNRS 2717, Universite Rennes 1, 35042 Rennes (France)
We report the fabrication and the physical and optical characterizations of sulphide Ga{sub x}Ge{sub 25-x}Sb{sub 10}S{sub 65(x=0,5)} rib waveguides. High quality films fabricated on SiO{sub 2}/Si wafer substrates were obtained using the sputtering magnetron rf deposition method. The slab waveguides obtained without annealing present propagation losses of about 0.6 dB/cm at 1550 nm. These optical losses are not important for implementation in optical devices based on silicon-on-insulator or polymer, for instance, atomic force microscopy measurements revealed low interface roughness between the different media (substrate/film and film/air). Reactive ion etching was used to pattern rib waveguides between 2 and 300 {mu}m wide. The parameters were optimized to obtain a dry etching process that had low surface roughness, vertical sidewalls, etch depth of more than 1 {mu}m, and reasonable etching rate. This technique was used to fabricate Y optical junctions for optical interconnections on chalcogenide amorphous films. Their optical transmission was demonstrated by optical near field of guided modes and optical losses were measured and discussed.
- OSTI ID:
- 21182654
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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