Thin films of silicon on low-cost substrates. Quarterly report No. 4, 1 October 1977-30 December 1977

Technical Report · Sat Jan 01 04:00:00 EST 1977

OSTI ID:6466598

Sarma, K R; Gurtler, R W; Baghdadi, A; Cota, M

The objective of this research program is to develop a new method for producing self-supporting silicon films utilizing an Energy Beam with low material and energy utilization and at high throughputs. During this quarter a horizontal Energy Beam system was designed, constructed and made operational. In the preliminary experiments, material efficiencies of about 50% were realized in the horizontal deposition system. Theoretical and experimental studies were conducted on the thermal expansion shear separation (TESS) technique. These studies indicated that shear separation is probably occurring in the deposited silicon film. RTR laser recrystallization studies of TESS samples demonstrated a considerable grain size enhancement. Initial economic analyses indicate that the cost of grain enhanced silicon film (100 ..mu..m thick) can be as low as $0.12/watt, based on the Energy Beam deposition and laser recrystallization technologies.

• Research Organization: Motorola, Inc., Phoenix, AZ (USA). Solar Energy Dept.
• DOE Contract Number: AC03-76ET20410
• OSTI ID: 6466598
• Report Number(s): DOE/ET/20410-T5; ON: DE81023090
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
COST
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DEPOSITION
ECONOMIC ANALYSIS
ECONOMICS
EFFICIENCY
ELEMENTS
ENERGY BEAM DEPOSITION
EXPANSION
FILMS
GRAIN SIZE
IMPURITIES
LASERS
METALS
MICROSTRUCTURE
MOLYBDENUM
RECRYSTALLIZATION
REFRACTORY METALS
RIBBON-TO-RIBBON METHOD
SEMIMETALS
SEPARATION PROCESSES
SHEAR
SILICON
SIZE
STRESSES
SUBSTRATES
SURFACE COATING
THERMAL EXPANSION
THERMAL STRESSES
TRANSITION ELEMENTS
TUNGSTEN