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U.S. Department of Energy
Office of Scientific and Technical Information

Thin films of silicon on low-cost substrates. Quarterly report No. 6, April 1-June 30, 1978

Technical Report ·
OSTI ID:5555044
During this quarter optimization of Energy Beam deposition conditions to produce self-supporting polycrystalline silicon films large enough for grain enhancement by the RTR process was continued. For the first time, an Energy Beam sample was successfully grain enhanced. This sample was doped to have a resistivity of 1 to 2 ..cap omega..-cm p-type. It is now awaiting solar-cell processing. To eliminate beam arcing problems in Energy Beam deposition, a multiple (4) electrode nozzle was conceived which is being fabricated presently. Neutron activation analysis indicated that the molybdenum concentration in the silicon films produced from the molybdenum TESS substrates is 3.37 ppma in the case of the Energy Beam deposition and 6.66 ppma in the case of CVD. These concentration values are an order of magnitude higher than previous SIMS results. Solar cells have been made for the first time on grain enhanced TESS samples produced by CVD. These had a conversion efficiency of 6.7% (with V/sub OC/ = 0.53 V, J/sub Sc/ = 24 mA/cm/sup 2/ and fill factor = 53%) under AM1 illumination. Poor metallization appears to be the main reason for the low fill factor.
Research Organization:
Motorola, Inc., Phoenix, AZ (USA)
DOE Contract Number:
AC03-76ET20410
OSTI ID:
5555044
Report Number(s):
DOE/ET/20410-T9; ON: DE81029305
Country of Publication:
United States
Language:
English