Thin films of silicon on low-cost substrates. Quarterly report No. 6, April 1-June 30, 1978
Technical Report
·
OSTI ID:5555044
During this quarter optimization of Energy Beam deposition conditions to produce self-supporting polycrystalline silicon films large enough for grain enhancement by the RTR process was continued. For the first time, an Energy Beam sample was successfully grain enhanced. This sample was doped to have a resistivity of 1 to 2 ..cap omega..-cm p-type. It is now awaiting solar-cell processing. To eliminate beam arcing problems in Energy Beam deposition, a multiple (4) electrode nozzle was conceived which is being fabricated presently. Neutron activation analysis indicated that the molybdenum concentration in the silicon films produced from the molybdenum TESS substrates is 3.37 ppma in the case of the Energy Beam deposition and 6.66 ppma in the case of CVD. These concentration values are an order of magnitude higher than previous SIMS results. Solar cells have been made for the first time on grain enhanced TESS samples produced by CVD. These had a conversion efficiency of 6.7% (with V/sub OC/ = 0.53 V, J/sub Sc/ = 24 mA/cm/sup 2/ and fill factor = 53%) under AM1 illumination. Poor metallization appears to be the main reason for the low fill factor.
- Research Organization:
- Motorola, Inc., Phoenix, AZ (USA)
- DOE Contract Number:
- AC03-76ET20410
- OSTI ID:
- 5555044
- Report Number(s):
- DOE/ET/20410-T9; ON: DE81029305
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL DOPING
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY BEAM DEPOSITION
ENERGY BEAM DEPOSITION FILMS
EQUIPMENT
EVALUATION
EXPANSION
FILMS
GRAIN SIZE
IMPURITIES
MATERIALS
METALS
MICROSTRUCTURE
MOLYBDENUM
NOZZLES
OPTIMIZATION
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
POLYCRYSTALS
QUANTITY RATIO
REFRACTORY METALS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SIZE
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
SURFACE COATING
THERMAL EXPANSION
TRANSITION ELEMENTS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL DOPING
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY BEAM DEPOSITION
ENERGY BEAM DEPOSITION FILMS
EQUIPMENT
EVALUATION
EXPANSION
FILMS
GRAIN SIZE
IMPURITIES
MATERIALS
METALS
MICROSTRUCTURE
MOLYBDENUM
NOZZLES
OPTIMIZATION
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
POLYCRYSTALS
QUANTITY RATIO
REFRACTORY METALS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SIZE
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
SURFACE COATING
THERMAL EXPANSION
TRANSITION ELEMENTS