A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1. 3 and 1. 55 [mu]m

Journal Article · Sat May 01 04:00:00 EDT 1993 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.236152· OSTI ID:6462481

Kagawa, Toshiaki; Kawamura, Yuichi; Iwamura, Hidetoshi ^[1]

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1. NTT Opto-electronics Labs., Atsugi-shi, Kanagawa (Japan)

This paper reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 [mu]m. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 [mu]m without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because of the transit time through the absorption layer is reduced.

• OSTI ID: 6462481
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 29:5; ISSN 0018-9197; ISSN IEJQA7
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ABSORPTION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
FABRICATION
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODIODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SORPTION
SUPERLATTICES