Segregation of impurities in directionally solidified silicon
Technical Report
·
OSTI ID:6460800
Hall measurements and four-point probe resistivity measurements are used to determine the concentration profile of boron and iron in doped semi-conductor silicon ingots grown by the Bridgman technique. The concentration profiles are fitted to the normal segregation equation and the effective segregation coefficient, K sub eff, is calculated. The average value of K sub eff, is 0.803 for boron. For iron, K sub eff, is concentration dependent and is in the range 0.00008 to 0.00012.
- Research Organization:
- Exxon Research and Engineering Co., Linden, NJ (USA)
- OSTI ID:
- 6460800
- Report Number(s):
- N-84-28647
- Country of Publication:
- United States
- Language:
- English
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