The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod
Journal Article
·
· Crystallography Reports
- Ganja State University (Azerbaijan)
- National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)
Gallium- and antimony-doped Ge{sub 1-x}Si{sub x} crystals (0 {<=} x {<=} 0.25) have been grown by the improved Bridgman method using a silicon seed and a macrohomogeneous feeding Ge-Si rod of the corresponding composition. The impurity concentration profiles along the grown crystals were determined from Hall measurements. The mathematical problem of impurity distribution along two-component mixed crystals grown from a melt with uniform and graded composition is solved in the Pfann approximation and within the virtual-crystal model for the solid solution. It is shown that the experimental impurity distributions in Ge{sub 1-x}Si{sub x} crystals are described well by the data calculated on the assumption of linear change in the impurity segregation coefficient with the crystal composition.
- OSTI ID:
- 22050862
- Journal Information:
- Crystallography Reports, Journal Name: Crystallography Reports Journal Issue: 1 Vol. 54; ISSN 1063-7745; ISSN CYSTE3
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:6453972