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Effective segregation coefficient of boron in silicon ingots grown by the Czochralski and Bridgman techniques

Conference · · Proc. - Electrochem. Soc.; (United States)
OSTI ID:6453972
Hall measurements and four-point-probe resistivity measurements are used to determine the concentration profile of boron in doped semiconductor silicon ingots grown by Czochralski and Bridgman techniques. The concentration profiles are fitted to the normal segregation equation and the effective segregation coefficient, k /SUB eff/, is calculated. The average value of k /SUB eff/ for boron is 0.786 in Czochralski single crystals and 0.803 in Bridgman polycrystals.
Research Organization:
Exxon Research and Engineering Company, Solar Electric Conversion Unit, Linden, New Jersey
OSTI ID:
6453972
Report Number(s):
CONF-8305161-
Conference Information:
Journal Name: Proc. - Electrochem. Soc.; (United States) Journal Volume: 83-11
Country of Publication:
United States
Language:
English