Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt
Journal Article
·
· Crystallography Reports
- Ganja State University (Azerbaijan)
- National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)
The problem regarding the distribution of aluminum and indium impurities in bulk crystals of solid solutions with a variable composition Ge{sub 1-x}Si{sub x} (0 {<=} x {<=} 0.3) is solved in order to establish regularities of the changes in the segregation coefficients of impurities with variations in the composition of the host lattice in the germanium-silicon system. Aluminum-and indium-doped crystals of Ge{sub 1-x}Si{sub x} (0 {<=} x {<=} 0.3) solid solutions with a silicon content decreasing along the crystallization axis are grown by a modified Bridgman method with the use of a silicon seed. The concentration distribution of impurities over the length of the crystals is determined from Hall measurements. It is demonstrated that the experimental data on the concentration distribution of impurities in the crystals are in good agreement with the results obtained from the theory according to which the equilibrium segregation coefficients of impurities vary linearly with a change in the composition of Ge-Si solid solution crystals.
- OSTI ID:
- 21091399
- Journal Information:
- Crystallography Reports, Journal Name: Crystallography Reports Journal Issue: 1 Vol. 51; ISSN 1063-7745; ISSN CYSTE3
- Country of Publication:
- United States
- Language:
- English
Similar Records
The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod
Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)
Solid solutions of the system Ge-Si near pure germanium
Journal Article
·
Wed Jan 14 23:00:00 EST 2009
· Crystallography Reports
·
OSTI ID:22050862
Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)
Journal Article
·
Mon Jan 06 23:00:00 EST 2014
· Journal of Applied Physics
·
OSTI ID:22271087
Solid solutions of the system Ge-Si near pure germanium
Journal Article
·
Sun May 01 00:00:00 EDT 1988
· Inorg. Mater. (Engl. Transl.); (United States)
·
OSTI ID:6422124