Quantitative measurement of residual biaxial stress by Raman spectroscopy in diamond grown on a Ti alloy by chemical vapor deposition

Journal Article · Thu Jul 15 00:00:00 EDT 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.48.2601· OSTI ID:6460221

Ager, III, J W; Drory, M D ^[1]

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1. Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)

Raman spectroscopy is used to study residual stress in diamond grown on Ti--6Al--4V by chemical vapor deposition. A general model is developed to use Raman spectroscopy to measure biaxial stress in polycrystalline, diamond-structure films. The as-grown film has 7.1 GPa of residual compressive stress, consistent with the difference in thermal-expansion coefficients between the diamond film and the substrate. Examination of the Raman spectra of the film in the vicinity of Brale indentations reveals that residual stresses in the film of up to approximately 17 GPa can be accommodated in the film before delamination occurs.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6460221
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 48:4; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ADHESION
CARBON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEPOSITION
DIAMONDS
ELEMENTAL MINERALS
ELEMENTS
EXPANSION
FILMS
MINERALS
NONMETALS
POLYCRYSTALS
RAMAN SPECTRA
RESIDUAL STRESSES
SPECTRA
STRESSES
SURFACE COATING
THERMAL EXPANSION
THIN FILMS