Effect of intrinsic growth stress on the Raman spectra of vacuum-arc-deposited amorphous carbon films
- Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
- Accelerator and Fusion Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
Amorphous carbon ({ital a}-C) films grown by vacuum-arc deposition techniques contain substantial amounts of compressive, residual, growth stress (over 10 GPa). The magnitude of the stress can be controlled by changing the incoming energy of the ions. It is observed that stress shifts the Raman scattering feature in these films to higher frequency by as much as 20 cm{sup {minus}1}. The Raman spectra of adhering and delaminated films are used to measure the magnitude of the stress-induced shift, which is {minus}1.9 cm{sup {minus}1}/GPa for compressive biaxial stress. The observed value is compared to that expected from disordered diamond and graphite structures. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 64855
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 66; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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