Sputter-induced grain boundary junctions in YBa[sub 2]Cu[sub 3]O[sub 7[minus][ital x]] thin films on MgO
- Materials Science Division and Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Department of Materials Science and Engineering and Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208 (United States)
A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa[sub 2]Cu[sub 3]O[sub 7[minus][ital x]] thin films on MgO. The YBa[sub 2]Cu[sub 3]O[sub 7[minus][ital x]] thin film grown on a pre-sputtered region of MgO was rotated 45[degree] about the [001] axis relative to the YBa[sub 2]Cu[sub 3]O[sub 7[minus][ital x]] thin film grown on an adjacent unsputtered region of the substrate. YBa[sub 2]Cu[sub 3]O[sub 7[minus][ital x]] thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45[degree] grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.
- DOE Contract Number:
- W-31-109-ENG-38
- OSTI ID:
- 6458417
- Journal Information:
- Journal of Applied Physics; (United States), Vol. 77:6; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTING FILMS
GRAIN BOUNDARIES
BARIUM OXIDES
COPPER OXIDES
ELECTRIC CONDUCTIVITY
HIGH-TC SUPERCONDUCTORS
JUNCTIONS
MOLECULAR BEAM EPITAXY
SPUTTERING
TEMPERATURE DEPENDENCE
YTTRIUM OXIDES
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
CHALCOGENIDES
COPPER COMPOUNDS
ELECTRICAL PROPERTIES
EPITAXY
FILMS
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SUPERCONDUCTORS
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS
360207* - Ceramics
Cermets
& Refractories- Superconducting Properties- (1992-)