Integrated multilayer sputter-induced 45{degree} YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} grain boundary junctions
- Materials Science Division and Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Department of Materials Science and Engineering and Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208 (United States)
A versatile multilayer technique has been developed to form 45{degree} YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} [001] tilt grain boundary junctions on LaAlO{sub 3} substrates. An epitaxial MgO layer is initially deposited on a (100) LaAlO{sub 3}substrate using pulsed organometallic beam epitaxy (POMBE). After a pregrowth sputter treatment, an YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} thin film is then grown using POMBE. The resultant film is {ital c}-axis oriented with a cube-on-cube orientation over the unsputtered portion of the MgO, and rotated by 45{degree} about the [001] axis on the sputtered region of the substrate. The resulting grain boundary junction shows weak-link behavior. The advantage of this technique is the ability to place the grain boundary anywhere on the substrate in any configuration, and the potential to use any substrate upon which MgO can be epitaxially grown. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 90461
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 67; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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