YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} on MgO films grown by pulsed organometallic beam epitaxy and a grain boundary junction application

Journal Article · Wed Nov 01 04:00:00 EST 1995 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.1995.2700· OSTI ID:124786

Dean, K A; Buchholz, D B; Marks, L D; Chang, R P.H. ^[1]; Vuchic, B V; Merkle, K L ^[2]; Studebaker, D B; Marks, T J ^[3]

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1. Department of Materials Science and Engineering, and NSF Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208-3108 (United States)
2. Materials Science Division, and NSF Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
3. Department of Chemistry, and NSF Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208-3108 (United States)

MgO films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}/MgO multilayer films were developed with the pulsed organometallic beam epitaxy (POMBE) growth technique, and grain boundary junctions were fabricated from the films to demonstrate the utility of the multilayers. High-quality MgO films were grown on LaAlO{sub 3} substrates by POMBE using a Mg(dpm){sub 2} precursor. MgO crystallinity, as assessed by x-ray diffraction rocking curves, improved with the use of CuO{sub {ital x}} or YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} buffer layers. YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films grown on the MgO layer by POMBE exhibited a {ital T}{sub {ital c}0} of 83 K and a {ital J}{sub {ital c}}(12 K) exceeding 10{sup 6} A/cm{sup 2} for applied magnetic fields up to 3{times}10{sup 4} Gauss. Grain boundary junctions were formed by growing YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} on MgO films that had been pretreated with a simple sputtering technique. This sputtering induces a controlled, 45{degree} grain boundary in subsequently deposited YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films. The resulting boundary showed weak-link current-voltage behavior and an {ital I}{sub {ital c}R}{sub {ital n}} product of 52 {mu}V at 10 K, demonstrating that sputter-induced grain boundary junctions are compatible with multilayer technology. copyright {ital 1995} {ital Materials} {ital Research} {ital Society}.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 124786
• Journal Information: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 11 Vol. 10; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
BEAMS
COPPER OXIDES
CRITICAL FIELD
ELECTRICAL PROPERTIES
EPITAXY
FILMS
GRAIN BOUNDARIES
LAYERS
MAGNESIUM OXIDES
SUPERCONDUCTIVITY
TRANSITION TEMPERATURE
YTTRIUM OXIDES