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Oxygenation and possible etching of high T sub c superconducting films by oxygen plasma

Conference · · AIP Conference Proceedings (American Institute of Physics); (USA)
OSTI ID:6456907
;  [1];  [2]
  1. Department of Applied Science, Brookhaven National Laboratory, Upton, NY (USA)
  2. Physics Department, Brookhaven National Laboratory, Upton, NY (USA)
The use of a radio frequency (RF) excited oxygen plasma for cleaning and oxygenation of high T{sub {ital c}} superconducting films at room temperature is studied by photoemission spectroscopy. Plasma oxidation at {similar to}10 mT pressure, removes comtaminants like carbon and causes the Ba 5p and 4d and the 0 ls corelevels to shift to lower binding energy. Valence band spectra for an epitaxial Y{sub 2}Ba{sub 4}Cu{sub 8}O{sub 15+{ital x}} film on SrTiO{sub 3} (001) show a Fermi edge and resemble spectra presented by other groups for YBa{sub 2}Cu{sub 3}O{sub 7} single crystals and epitaxial films. These films also show a sharp 0 ls corelevel near 528 eV. Possible reactive ion etching of a degraded YBCO film surface is demonstrated in a series of spectra taken after successive oxygen plasma treatments. A surface contaminated with BaCO{sub 3} becomes barium deficient after the initial plasma treatment but a second plasma treatment of a substrate biased to {minus}200 V to promote sputtering produces photoemission features typical of an YBa{sub 2}Cu{sub 3}O{sub 7} surface.
DOE Contract Number:
AS05-80ER10742; AC02-76CH00016
OSTI ID:
6456907
Report Number(s):
CONF-891092--
Conference Information:
Journal Name: AIP Conference Proceedings (American Institute of Physics); (USA) Journal Volume: 199:1
Country of Publication:
United States
Language:
English