Semiconductor laser

Patent · Tue Jun 12 04:00:00 EDT 1984

OSTI ID:6453877

Marschall, P; Schlosser, E; Wolk, C

An improved semiconductor laser of the type composed of a sequence of semiconductor layers forming a heterostructure diode including a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers, two respectively differently doped semiconductor layers disposed at respectively opposite sides of the active zone, a monocrystalline outer layer located in the layer sequence and spaced from one of the differently doped semiconductor layers by an additional layer, a troughshaped recess extending essentially perpendicularly to the radiation exit face formed in the outer major surface of the monocrystalline layer, and means disposed adjacent the recess for constricting the current flow in the forward direction of the diode to a narrow strip-shaped region in the laser active zone. The series resistance of such a laser is lowered in that the bottom of the recess is formed by the additional semiconductor layer adjacent the monocrystalline layer and an electrically conductive contact is provided on at least the bottom of the recess.

• Assignee: LICENTIA Patent-Vertwaltungs-GmbH (Germany, Federal Republic of)
• Patent Number(s): US 4454603
• OSTI ID: 6453877
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CRYSTALS
DESIGN
DOPED MATERIALS
ELECTRIC CONDUCTORS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
EQUIPMENT
LASER RADIATION
LASERS
LAYERS
MATERIALS
MONOCRYSTALS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS