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Semiconductor laser diode

Patent ·
OSTI ID:6946783
A semiconductor laser diode is disclosed with a connection electrode consisting of a chromium/gold alloy on a highly-doped gallium arsenide layer. The gallium arsenide layer is strip shaped and overlies a further lesser doped layer of gallium aluminum arsenide. The chromium/gold contact has a low-resistance junction only in the region of the more highly doped layer so that a strip shaped restriction of the current path occurs in the semiconductor body. Accordingly, a laser-active zone which is only strip-shaped is achieved.
Assignee:
EDB-83-017888
Patent Number(s):
US 4352187
OSTI ID:
6946783
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
CHROMIUM ALLOYS
CRYSTAL DOPING
DESIGN
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRODES
ELEMENTS
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD ALLOYS
JUNCTIONS
LASERS
LAYERS
MATERIALS
METALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS