Heterojunction semiconductor laser fabrication utilizing laser radiation

Patent · Tue Mar 09 04:00:00 EST 1982

OSTI ID:5061849

Tien, P K

A stripe geometry is fabricated in a laser-diode structure having a plurality of epitaxial layers, including in tandem an undoped active semiconductor layer (3), a p-doped semiconductor layer (4), a moderately n-doped semiconductor layer (5) and a heavily p+-doped layer (6) by focusing laser radiation on the ndoped semiconductor layer (5). The laser radiation is chosen to have a wavelength which passes through the p+-doped layer (6) without absorption. When the laser radiation is absorbed in the N -doped layer, heat is generated which causes diffusion of pdopant from the two adjacent layers to convert the exposed region to p-type. As the laser beam is scanned, a stripe having a forward pn junction for laser action is formed.

• Assignee: Bell Telephone Laboratories Inc
• Patent Number(s): US 4318752
• OSTI ID: 5061849
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ANNEALING
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
FABRICATION
HEAT TREATMENTS
JUNCTIONS
LASER RADIATION
LASERS
LAYERS
MATERIALS
P-N JUNCTIONS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS