Semiconductor laser device capable of radiating a visible ray

Patent · Tue Aug 25 04:00:00 EDT 1981

OSTI ID:6069812

Makita, Y

Disclosed is a semiconductor laser device capable of radiating a visible laser in which device an activation layer having an active stripe zone doped by ion-implantation of nitrogen atoms is vertically sandwiched between an overlying p-type confining layer and n-type confining layer, and the p-type confining layer is horizontally bounded by a p-n junction reverse bias layer, whereby in supplying a bias electric current through the p-type confining layer, the electric current avoids the counter bias layer to converge a flow through the active zone to the underlying n-type confining layer, thus attaining the same effect as would lower the threshold value of the luminescent semiconductor, and allowing the laser device to oscillate at an elevated efficiency in the range of visible laser.

• Assignee: Agency of Ind Science and Technology JP; Japan International Trade Ind Min of (Japan)
• Patent Number(s): US 4286231
• OSTI ID: 6069812
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
DOPED MATERIALS
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPLANTS
ION IMPLANTATION
JUNCTIONS
LASERS
MATERIALS
N-TYPE CONDUCTORS
NITROGEN
NONMETALS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SUBSTRATES
VISIBLE RADIATION