SEU immunity: The effects of scaling on the peripheral circuits of SRAMs
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6450705
- Loral Federal Systems, Manassas, VA (United States)
Heavy ion testing on a scaled 256K SRAM has shown that SEU analysis of the peripheral circuits as well as the memory cell must be performed as circuits are scaled to smaller and smaller dimensions. This paper describes the SEU induce phenomena experienced by the scaled version of a previous 256K radiation hardened SRAM design, affected by circuits in the periphery.
- OSTI ID:
- 6450705
- Report Number(s):
- CONF-940726--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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