Analysis of neutron damage in high-temperature silicon carbide JFETs
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6450697
- Army Research Lab., Adelphi, MD (United States)
Neutron-induced displacement damage effects in n-channel, depletion-mode junction-field-effect transistors (JFETs) fabricated on 6H-silicon carbide are reported as a function of temperature from room temperature (RT) to 300 C. The data are analyzed in terms of a refined model that folds in recently reported information on the two-level ionization energy structure of the nitrogen donors. A value of 5 [+-] 1 cm[sup [minus]3] per n/cm[sup 2] is obtained for the deep-level defect introduction rate induced by the neutron irradiation. Due to partial ionization of the donor atoms at RT, the carrier removal rate is a function of temperature, varying from 3.5 cm[sup [minus]1] at RT to 4.75 cm[sup [minus]1] at 300 C. The relative neutron effect on carrier mobility varies with temperature approximately as T[sup [minus]7/2], dropping by an order of magnitude at 300 C compared with the RT effect. The results offer further support for the use of SiC devices in applications which combine high-temperature and severe radiation environments, where the use of Si and GaAs technologies is limited.
- OSTI ID:
- 6450697
- Report Number(s):
- CONF-940726--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 41:6Pt1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMBIENT TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC DISPLACEMENTS
CHARGE CARRIERS
DATA ANALYSIS
ELEMENTS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TRANSISTORS
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMBIENT TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC DISPLACEMENTS
CHARGE CARRIERS
DATA ANALYSIS
ELEMENTS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TRANSISTORS