Silicon carbide FETs for high temperature nuclear environments
Journal Article
·
· IEEE Transactions on Nuclear Science
- Army Research Lab., Adelphi, MD (United States)
SiC transistors can operate at very high temperatures and survive very high radiation doses. These characteristics make SiC potentially the ideal technology for nuclear power applications. In this paper the authors report, for the first time, on the active in-core irradiation of 6H-SiC depletion-mode junction field-effect transistors (JFETs) at 25 and 300 C in a nuclear reactor operated at 200 kW. No significant degradation in the device characteristics was observed until the total neutron fluence exceeded 10{sup 15} n/cm{sup 2} for irradiation at 25 C, and no significant changes were observed even at 5 {times} 10{sup 15} n/cm{sup 2} at 300 C. The results of this experiment may also indicate exciting evidence for the anneal of neutron displacement damage for devices irradiated at 300 C.
- OSTI ID:
- 276473
- Report Number(s):
- CONF-951073--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt2 Vol. 43; ISSN IETNAE; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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