Displacement damage effects in SiC JFETs as a function of temperture
Conference
·
· AIP Conference Proceedings (American Institute of Physics); (United States)
OSTI ID:5649162
- US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)
- BoozAllen Hamilton, Inc., 891 Elkridge Landing Road, Linthicum, Maryland 21090 (United States)
A study of neutron-induced displacement damage effects as a function of temperature is reported for [ital n]-channel, 2-[mu]m channel length, depletion mode junction-field-effect-transistor (JFETs) fabricated on 6H-silicon carbide (SiC). Very little effect on the electrical characteristics of the devices was observed for neutron fluences less than 10[sup 15] n/cm[sup 2] and the effect for fluences greater than 10[sup 15] n/cm[sup 2] became less significant with increasing temperature. The results offer promise for SiC devices to be used in applications which combine high-temperature and radiation environments, where Si and GaAs technologies are limited.
- OSTI ID:
- 5649162
- Report Number(s):
- CONF-930103--
- Conference Information:
- Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 271:2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CARBIDES
CARBON COMPOUNDS
CARRIER DENSITY
DAMAGE
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
FIELD EFFECT TRANSISTORS
JUNCTION TRANSISTORS
MOBILE REACTORS
NEUTRON FLUENCE
PHYSICAL PROPERTIES
POWER REACTORS
RADIATION EFFECTS
REACTORS
SEMICONDUCTOR DEVICES
SILICON CARBIDES
SILICON COMPOUNDS
SPACE POWER REACTORS
TEMPERATURE DEPENDENCE
TRANSISTORS
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CARBIDES
CARBON COMPOUNDS
CARRIER DENSITY
DAMAGE
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
FIELD EFFECT TRANSISTORS
JUNCTION TRANSISTORS
MOBILE REACTORS
NEUTRON FLUENCE
PHYSICAL PROPERTIES
POWER REACTORS
RADIATION EFFECTS
REACTORS
SEMICONDUCTOR DEVICES
SILICON CARBIDES
SILICON COMPOUNDS
SPACE POWER REACTORS
TEMPERATURE DEPENDENCE
TRANSISTORS