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The surface generation hump in irradiated power MOSFETs

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6450204
 [1];  [2]; ;  [3]
  1. Univ. of Arizona, Tucson, AZ (United States). Dept. of Electrical and Computer Engineering Sematech, Austin, TX (United States)
  2. Intel Corp., Chandler, AZ (United States)
  3. Univ. of Arizona, Tucson, AZ (United States). Dept. of Electrical and Computer Engineering
+ Show Author Affiliations

A method of quantifying near midgap-level interface traps, capture cross section, and changes in oxide-trapped charge using a surface generation hump in the subthreshold curve (I[sub d] vs. V[sub g]) of power MOSFETs is developed. The surface generation hump is a result of the generation of carriers from traps at the depleted Si-SiO[sub 2] interface in a gated diode-type structure. The charge neutrality point of the hump is determined, and shifts of this point are due solely to changes in oxide-trapped charge. Another point is used to determine the stretch out of the hump, and thus the interface trap density. With the interface trap density determined, the capture cross section is extracted from the surface generation velocity.

OSTI ID:
6450204
Report Number(s):
CONF-940726--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English

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Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CHARGE CARRIERS
DEPLETION LAYER
ELEMENTS
FIELD EFFECT TRANSISTORS
LAYERS
MOS TRANSISTORS
MOSFET
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPACE FLIGHT
TRANSISTORS