1. 55-mm narrow planar stripe InGaAsP lasers with deep Zn diffusion

Journal Article · Mon Jun 15 00:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92234· OSTI ID:6446762

Kawaguchi, H; Takahei, K; Suzuki, Y; Iwane, G

Narrow planar stripe InGaAsP lasers with deep Zn diffusion are experimentally demonstrated at a wavelength of around 1.55 mm. Improved current confinement was achieved by the deep Zn diffusion structure, and low-threshold lasers with a 3-mm stripe were obtained. Measured far-field patterns indicate that the lateral transverse mode is mainly determined by antiguiding. Narrow stripe lasers of this type show a tendency to operate in a multilongitudinal mode.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo 180 Japan
• OSTI ID: 6446762
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DATA
DIFFUSION
DIMENSIONS
DISTRIBUTION
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
METALS
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPATIAL DISTRIBUTION
THICKNESS
WAVEGUIDES
WAVELENGTHS
ZINC