Guiding mechanisms controlled by impurity concentrations: (Al,Ga)As planar stripe lasers with deep Zn diffusion

Journal Article · Thu May 01 00:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328006· OSTI ID:5371407

Ueno, M; Yonezu, H

The waveguiding characteristics in a (Al, Ga) As double-heterostructure laser, where a built-in refractive-index profile in the active layer is introduced by impurity concentration profile, have been investigated under the lasing conditions using the planar stripe laser with deep Zn diffusion. The effective refractive-index step, which determines the waveguiding mechanism, consists of the built-in refractive-index step and a negative index step associated with injected electrons into the active region. It has been found that waveguiding characteristics can be changed from antiguiding tendency to normal guiding by varying the combination of hole and electron concentrations.

• Research Organization: Central Research Laboratories, Nippon Electric Co., Ltd., Takatsu-ku, Kawasaki, Japan
• OSTI ID: 5371407
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
DATA
DIFFUSION
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
IMPURITIES
INFORMATION
LASERS
LAYERS
LEPTONS
MATHEMATICAL MODELS
METALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
QUANTITY RATIO
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
WAVEGUIDES
ZINC