Heavy ion and proton-induced single event multiple upset

Journal Article · Mon Dec 01 04:00:00 EST 1997 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.659039· OSTI ID:644213

Reed, R A ^[1]; Carts, M A; Marshall, P W ^[1]

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1. Naval Research Lab., Washington, DC (United States)

Individual ionizing heavy ion events are shown to cause two or more adjacent memory cells to change logic states in a high density CMOS SRAM. A majority of the upsets produced by normally incident heavy ions are due to single-particle events that causes a single cell to upset. However, for grazing angles a majority of the upsets produced by heavy-ion irradiation are due to single-particle events that cause two or more cells to change logic states. Experimental evidence of a single proton-induced spallation reaction that causes two adjacent memory cells to change logic states is presented. Results from a dual volume Monte-Carlo simulation code for proton-induced single-event multiple upsets are within a factor of three of experimental data for protons at normal incidence and 70 degrees.

• OSTI ID: 644213
• Report Number(s): CONF-970711--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ERRORS
HEAVY IONS
MONTE CARLO METHOD
PHYSICAL RADIATION EFFECTS
PROTONS
SEMICONDUCTOR STORAGE DEVICES