The radiation response of capacitors fabricated on bonded silicon-on-insulator substrates

Journal Article · Sun Nov 30 23:00:00 EST 1997 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.659026· OSTI ID:644204

McMarr, P J ^[1]; Mrstik, B J; Jernigan, G G ^[2]; Lawrence, R K ^[3]

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1. SFA, Inc., Landover, MD (United States)
2. Naval Research Lab., Washington, DC (United States)
3. ARACOR/SFA, Washington, DC (United States)

Silicon-on-insulator substrates were manufactured by bonding a thermal oxide of silicon to a silicon wafer. Metal-oxide-silicon capacitors were fabricated on these substrates. Capacitors were also fabricated on unbonded thermal oxides. Capacitance-voltage measurements were performed on the bonded and unbonded oxides, before and after 10 keV x-ray irradiation. The flatband shift for the irradiated bonded oxide was nearly double that of the irradiated unbonded oxide. The radiation-induced shifts of the capacitance-voltage curves are shown to be related to the density differences between the bonded and unbonded oxides.

• OSTI ID: 644204
• Report Number(s): CONF-970711--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CAPACITORS
ELECTRICAL PROPERTIES
FABRICATION
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
X RADIATION