Integrity of III-V heterojunction interfaces under gamma irradiation
Journal Article
·
· IEEE Transactions on Nuclear Science
- Oregon State Univ., Corvallis, OR (United States). Dept. of Electrical and Computer Engineering
- Arizona State Univ., Tempe, AZ (United States). Dept. of Electrical Engineering
Reliability of modern III-V semiconductor heterostructure devices meant for strong radiation environment depends upon the integrity of the hetero-interfaces under radiation. In this paper, the authors present some results of their investigation of a variety of heterojunction structures subjected to gamma irradiation up to 40 Mrads (Si) probed by Hall, C-V and photoluminescence measurements.
- OSTI ID:
- 644180
- Report Number(s):
- CONF-970711--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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