Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.685219· OSTI ID:644140

Montagner, X; Briand, R; Fouillat, P; Touboul, A ^[1]; Schrimpf, R D; Galloway, K F ^[2]; Calvet, M C ^[3]; Calvel, P ^[4]

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1. Univ. of Bordeaux 1, Talence (France). Lab. IXL
2. Vanderbilt Univ., Nashville, TN (United States)
3. Aerospatiale, Les Mureaux (France)
4. Alcatel Telecom, Toulouse (France)

A method to predict low dose rate degradation of bipolar transistors using high dose-rate, high temperature irradiation is evaluated, based on an analysis of four new rad-parameters that are introduced in the BJT SPICE model. This improved BJT model describes the radiation-induced excess base current with great accuracy. The low-level values of the rad-parameters are good tools for evaluating the proposed high-temperature test method because of their high sensitivity to radiation-induced degradation.

• OSTI ID: 644140
• Report Number(s): CONF-970934--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt3 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DOSE RATES
ELECTRICAL PROPERTIES
JUNCTION TRANSISTORS
PHYSICAL RADIATION EFFECTS
TEMPERATURE DEPENDENCE