Insulator photocurrents: Application to dose rate hardening of CMOS/SOI integrated circuits
Journal Article
·
· IEEE Transactions on Nuclear Science
- CEA, Bruyeres-le-Chatel (France)
Irradiation of insulators with a pulse of high energy x-rays can induce photocurrents in the interconnections of integrated circuits. The authors present, here, a new method to measure and analyze this effect together with a simple model. They also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. They show that it explains some of the upsets observed in a SRAM embedded in an ASIC.
- OSTI ID:
- 644137
- Report Number(s):
- CONF-970934-; ISSN 0018-9499; TRN: 98:008070
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 45, Issue 3Pt3; Conference: RADECS 97: radiations and their effects on devices and systems conference, Cannes (France), 15-19 Sep 1997; Other Information: PBD: Jun 1998
- Country of Publication:
- United States
- Language:
- English
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