Near-field and far-field patterns of phase-locked semiconductor laser arrays
Journal Article
·
· Appl. Phys. Lett.; (United States)
A gain-guided phase-locked semiconductor laser array has been observed to emit a single narrow lobed far-field radiation pattern up to 70 mW, at which power level it exhibits a distinct change. We show that this effect results from a new phase-locked mode attaining threshold; the original mode remains phase locked above this power level.
- Research Organization:
- Xerox Palo Alto Research Centers, Palo Alto, California 94304
- OSTI ID:
- 6430699
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:6; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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