Far-field behavior of injection-locked semiconductor laser arrays
Journal Article
·
· Appl. Opt.; (United States)
We have developed a computer model of injection-locked gain-guided semiconductor arrays to explain some experimental observations: the creation of a single-lobed far field from a normally double-lobed far field; the increase in the divergence angle of the far-field lobe(s); the shifting of power from one off-axis lobe to the other; and the regression back to a double-lobed far field when the ratio between array power and injection power becomes too large. The model is then extrapolated to look at properties of the index-guided case: inefficient end-element injection but an on-axis single-lobed center-element injection.
- Research Organization:
- General Electric Company, Electronics Laboratory, Syracuse, New York 13221
- OSTI ID:
- 6088606
- Journal Information:
- Appl. Opt.; (United States), Journal Name: Appl. Opt.; (United States) Vol. 26:21; ISSN APOPA
- Country of Publication:
- United States
- Language:
- English
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