Modeling of injection-locking phenomena in diode-laser arrays

Journal Article · Fri Feb 28 23:00:00 EST 1986 · Opt. Lett.; (United States)

DOI:https://doi.org/10.1364/OL.11.000144· OSTI ID:6081174

Hadley, G R; Owyoung, A; Hohimer, J P

We report the first self-consistent numerical model to our knowledge of the injection-locking process in a gain-guided diode-laser array. This model reproduces two essential features of device behavior seen in recent experiments: (1) the single-lobed far-field output beam that results from injection a single end-element of the array and (2) the linear dependence of the far-field beam angle on injection frequency. This angular scanning of the far-field beam angle can be understood on the basis of a simple plane-wave picture in which a change in the injection frequency leads to a tilt of the wave front in the diode-laser array in order to maintain the Fabry--Perot resonance condition.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6081174
• Journal Information: Opt. Lett.; (United States), Journal Name: Opt. Lett.; (United States) Vol. 11:3; ISSN OPLED
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
CONFIGURATION
GAIN
LASERS
MATHEMATICS
MODE LOCKING
NUMERICAL ANALYSIS
PERFORMANCE
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TUNING