Injection behavior and modeling of 100-mW broad-area diode lasers
The output from a single-frequency, narrow-linewidth GaAlAs diode laser was injected into a 100-mW broad-area diode laser. The injected broad-area laser emitted in a single longitudinal mode with up to 80 mW in a single, diffraction-limited, 0.5-FWHM far-field lobe. The angle of the far-field lobe steered with injection frequency and broad-area laser-bias current, displaying behavior similar to that observed with injected gain-guided laser arrays. A Fabry-Perot amplifier model is proposed, which explains the injection behavior in terms of Gaussian beam propagation in a large optical cavity. The model provides criteria for optimizing locking bandwidth, beam steering, and injection efficiency.
- Research Organization:
- Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
- OSTI ID:
- 6884084
- Report Number(s):
- AD-A-198117/4/XAB; JA-6004
- Country of Publication:
- United States
- Language:
- English
Similar Records
Injection behavior of high-power broad-area diode lasers
High-speed electronic beam steering using injection locking of a laser-diode array
Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC EQUIPMENT
EQUIPMENT
FUNCTIONAL MODELS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS