Injection behavior and modeling of 100-mW broad-area diode lasers

Technical Report · Fri Apr 01 04:00:00 EST 1988

OSTI ID:6884084

Abbas, G L; Yang, S; Chan, V W; Fujimoto, J G

The output from a single-frequency, narrow-linewidth GaAlAs diode laser was injected into a 100-mW broad-area diode laser. The injected broad-area laser emitted in a single longitudinal mode with up to 80 mW in a single, diffraction-limited, 0.5-FWHM far-field lobe. The angle of the far-field lobe steered with injection frequency and broad-area laser-bias current, displaying behavior similar to that observed with injected gain-guided laser arrays. A Fabry-Perot amplifier model is proposed, which explains the injection behavior in terms of Gaussian beam propagation in a large optical cavity. The model provides criteria for optimizing locking bandwidth, beam steering, and injection efficiency.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 6884084
• Report Number(s): AD-A-198117/4/XAB; JA-6004
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC EQUIPMENT
EQUIPMENT
FUNCTIONAL MODELS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS