skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Carrier collection efficiency of amorphous silicon hydride Schottky barrier solar cells: Effects of recombination

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.329397· OSTI ID:6428726

Exact solutions for the photogenerated carrier densities and the carrier collection efficiency have been found for amorphous silicon hydride (a-SiH/sub x/ ) Schottky barrier solar cells. The dependence of the collection efficiency eta on the nature of the contacts, and on the four characteristic lengthscales (thickness of a-SiH/sub x/ film, hole diffusion length, absorption length, and width of the depletion region) is determined. Strong dependence of eta on the width of the depletion region at very short wavelengths and on the hole diffusion length at long wavelengths suggests that the theory presented here can be used for the determination of these parameters from the experimental measurements of eta in solar cells with intimate metal/semiconductor contacts.

Research Organization:
Theoretical Sciences Group, Exxon Research and Engineering Company, P. O. Box 45, Linden, New Jersey 07036
OSTI ID:
6428726
Journal Information:
J. Appl. Phys.; (United States), Vol. 52:8
Country of Publication:
United States
Language:
English