Collection efficiency of photogenerated carriers in silicon hydride a-SiH/sub x/ MIS solar cell structures

Journal Article · Mon Jun 01 04:00:00 EDT 1981 · AIP Conf. Proc.; (United States)

DOI:https://doi.org/10.1063/1.33050· OSTI ID:6133471

Abeles, B; Wronski, C R; Goldstein, Y; Stasiewski, H E; Gutkowicz-Krusin, D; Tiedje, T; Cody, G D

The collection efficiency in a-SiH/sub x/ Schottky barrier solar cell structures is enhanced at short wavelengths by a thin oxide layer at the metal semiconductor interface due to reduction in diffusion of electrons from the semiconductor into the metal. Interpretation of the experimental results yields a diffusion length for holes of 0.2..mu..m and a depletion width of 0.26..mu..m.

• Research Organization: Exxon Research and Engineering Company, P.O. Box 45, Linden, N.J. 07036
• OSTI ID: 6133471
• Report Number(s): CONF-810331-
• Journal Information: AIP Conf. Proc.; (United States), Journal Name: AIP Conf. Proc.; (United States) Vol. 73:1; ISSN APCPC
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
FILMS
LENGTH
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT