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Carrier-collection efficiencies in amorphous hydrogenated silicon Schottky-barrier solar cells

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.328559· OSTI ID:6256512
We report the results of a systematic study of correlations in the collection efficiency, collection length, depletion width, midgap density of states and energy-band gap in sputter and silane-decomposition-produced amorphous hydrogenated silicon Schottky diodes. Films produced by sputtering have a collection length L/sub c/, which is less than the depletion width W, unlike silane-decomposition-produced films for which L/sub c/approx. =W. We show that the relatively weak variation of the deduced hole-mobility-lifetime product with midgap state density and temperature is consistent with the holes becoming immobilized before recombining. The collection efficiency is found to be controlled dominantly by the field-assisted diffusion of carriers in the depletion region, and not limited by geminate recombination.
Research Organization:
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
DOE Contract Number:
EG-77-C-01-4042
OSTI ID:
6256512
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:10; ISSN JAPIA
Country of Publication:
United States
Language:
English