Effect of confining layer aluminum composition on AlGaAs-GaAs-InGaAs strained-layer quantum well heterostructure lasers

Journal Article · Mon Aug 27 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103408· OSTI ID:6427098

York, P K; Langsjoen, S M; Miller, L M; Beernink, K J; Alwan, J J; Coleman, J J ^[1]

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1. Compound Semiconductor Microelectronics Laboratory, University of Illinois, Urbana, IL (USA) Materials Research Laboratory, University of Illinois, Urbana, IL (USA)

Data are presented on laser threshold current density and emission wavelength of strained-layer InGaAs-GaAs-Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As single quantum well lasers having confining layer aluminum compositions in the range 0.20{le}{ital x}{le}0.85. A decrease in threshold current density with increasing confining layer composition is related to the increased confinement factor of the waveguide structure. An increase in the laser emission wavelength is observed as a consequence of reduced bandfilling.

• OSTI ID: 6427098
• Journal Information: Applied Physics Letters; (USA), Vol. 57:9; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
DESIGN
ENERGY LEVELS
FABRICATION
WAVEGUIDES
CHEMICAL COATING
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
LASERS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SURFACE COATING
426002* - Engineering- Lasers & Masers- (1990-)