Reactive sputter etching of magnetic materials in an HCl plasma

Journal Article · Wed Nov 30 23:00:00 EST 1988 · Plasma Chem. Plasma Process.; (United States)

DOI:https://doi.org/10.1007/BF01016056· OSTI ID:6423479

Heijman, M G.J.

In an rf low-pressure HCl plasma NiZn and MnZn ferrite etch up to five times as fast as in an otherwise comparable Ar sputter etch process. Selectivity towards Al/sub 2/O/sub 3/ as an etch mask is of order 10. No redeposited material and very little trenching are seen. The etched slopes have a steepness up to 70/sup 0/, resulting from redeposition and enhanced etching on the sidewalls. This is shown by experiments and by computer simulations.

• Research Organization: Philips Research Lab., Eindhoven (Netherlands)
• OSTI ID: 6423479
• Journal Information: Plasma Chem. Plasma Process.; (United States), Journal Name: Plasma Chem. Plasma Process.; (United States) Vol. 8:4; ISSN PCPPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400800 -- Combustion
Pyrolysis
& High-Temperature Chemistry
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARGON IONS
BEAMS
CHALCOGENIDES
CHARGED PARTICLES
COMPUTERIZED SIMULATION
CRYSTALS
ELECTRIC DISCHARGES
ELECTRON MICROSCOPY
ETCHING
FERRIMAGNETIC MATERIALS
FERRITES
HIGH-FREQUENCY DISCHARGES
HYDROCHLORIC ACID
HYDROGEN COMPOUNDS
INORGANIC ACIDS
ION BEAMS
IONIZATION
IONS
IRON COMPOUNDS
MAGNETIC MATERIALS
MANGANESE COMPOUNDS
MASKING
MATERIALS
MICROSCOPY
NICKEL COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PLASMA
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SIMULATION
SPUTTERING
SURFACE FINISHING
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS