Reactive sputter etching of magnetic materials in an HCl plasma

Journal Article · Thu Dec 01 00:00:00 EST 1988 · Plasma Chem. Plasma Process.; (United States)

DOI:https://doi.org/10.1007/BF01016056· OSTI ID:6423479

Heijman, M G.J.

In an rf low-pressure HCl plasma NiZn and MnZn ferrite etch up to five times as fast as in an otherwise comparable Ar sputter etch process. Selectivity towards Al/sub 2/O/sub 3/ as an etch mask is of order 10. No redeposited material and very little trenching are seen. The etched slopes have a steepness up to 70/sup 0/, resulting from redeposition and enhanced etching on the sidewalls. This is shown by experiments and by computer simulations.

• Research Organization: Philips Research Lab., Eindhoven (Netherlands)
• OSTI ID: 6423479
• Journal Information: Plasma Chem. Plasma Process.; (United States), Vol. 8:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
HYDROCHLORIC ACID
HIGH-FREQUENCY DISCHARGES
MAGNETIC MATERIALS
ETCHING
ALUMINIUM OXIDES
ARGON IONS
COMPUTERIZED SIMULATION
FERRITES
ION BEAMS
IONIZATION
MANGANESE COMPOUNDS
MASKING
NICKEL COMPOUNDS
PLASMA
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SPUTTERING
TEMPERATURE DEPENDENCE
ZINC COMPOUNDS
ALUMINIUM COMPOUNDS
BEAMS
CHALCOGENIDES
CHARGED PARTICLES
CRYSTALS
ELECTRIC DISCHARGES
ELECTRON MICROSCOPY
FERRIMAGNETIC MATERIALS
HYDROGEN COMPOUNDS
INORGANIC ACIDS
IONS
IRON COMPOUNDS
MATERIALS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
SIMULATION
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies
400800 - Combustion
Pyrolysis
& High-Temperature Chemistry