A new CBrF/sub 3/ process for etching tapered trenches in silicon

Journal Article · Sat Aug 01 00:00:00 EDT 1987 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2100803· OSTI ID:5762019

Engelhardt, M; Schwarzl, S

A new process for etching trenches in bulk silicon for the generation of trench capacitors in highly integrated DRAM's is reported. Trenches, 1 ..mu..m wide and up to 2 ..mu..m deep, were etched in RIE mode with CBrF/sub 3/ using a single wafer etcher. The trenches have very smooth sidewalls. The slope of the sidewall can easily be controlled by the RF power. The possibility of tapering the trench in bulk silicon is attributed to the low selectivities of the process with regard to the oxide mask, leading to enhanced sputter etch of the mask.

• Research Organization: Siemens AG, Technology Center for Microelectronics, D-8000 Munich 83
• OSTI ID: 5762019
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 134:8A; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
BROMINE COMPOUNDS
BROMINE FLUORIDES
CAPACITORS
CARBON COMPOUNDS
CARBON FLUORIDES
DIMENSIONS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
ETCHING
FABRICATION
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
RADIATIONS
RADIOWAVE RADIATION
SEMIMETALS
SILICON
SPUTTERING
SURFACE FINISHING