Hydrogen motion in thermally annealed sputter-deposited hydrogenated amorphous silicon
It is shown that the bulk hydrogen concentration in radio-frequency (rf) sputtered films of hydrogenated amorphous silicon (a-Si:H) can be determined from reflected electron energy-loss spectroscopy signals obtained even during ion beam etching of the film. As a result, depth profiling, with a 50-A depth resolution of the hydrogen concentration, and with 1 at. % accuracy of the a-Si:H/sub x//a-Si:H/sub y/ multilayer, is achieved. Using this technique to depth profile annealed multilayer samples of rf sputter-deposited a-Si:H, it was found that despite the loss of hydrogen at elevated temperatures the original interface widths are unchanged even after a 500 /sup 0/C, 1 h anneal. This result contrasts sharply with previous measurements of hydrogen motion in glow-discharge a-Si:H and indicates a significant difference between the two types of a-Si:H with respect to hydrogen motion at elevated temperatures.
- Research Organization:
- Ames Laboratory, United States Department of Energy and Department of Physics, Iowa State University, Ames, Iowa 50011
- DOE Contract Number:
- W-7405-ENG-82
- OSTI ID:
- 6422487
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ANNEALING
ATOM TRANSPORT
CHEMICAL COMPOSITION
DATA
DIFFUSION
ELECTRIC DISCHARGES
ELEMENTS
ETCHING
EXPERIMENTAL DATA
FILMS
GLOW DISCHARGES
HEAT TREATMENTS
HIGH TEMPERATURE
HYDROGEN
IMPURITIES
INFORMATION
LAYERS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
NUMERICAL DATA
RADIATION TRANSPORT
RESOLUTION
SEMIMETALS
SILICON
SURFACE FINISHING
THIN FILMS