A study of deposition conditions and hydrogen motion in rf sputtered hydrogenated amorphous silicon

Technical Report · Mon Jun 01 04:00:00 EDT 1987

OSTI ID:6297764

Albers, M L

a-Si:H films were prepared by rf sputtering in He/H2, Ar/H2, and Xe/H2 atmospheres. The rf power used for deposition was varied from 0.27 to 3.3 W/cmS. The films were characterized. The deposition rates of these films were found to vary linearly with deposition rates predicted from known sputtering yields. Total hydrogen concentration agreed with a kinematic model for hydrogen incorporation. The concentration of silicon atoms bonded to more than one hydrogen atom agreed with a random statistical model. Samples prepared in an Ar/H2 atmosphere above 2.2 W/cmS were of the highest quality. Samples consisting of alternating layers of high and low hydrogen concentration were also prepared. These samples were confirmed to be multilayers. Thermal annealing showed that hydrogen does not diffuse, but rather effuses out of the sample, at elevated temperatures. These experiments also indicated that silicon-hydrogen bonds in rf sputtered a-Si:H are stronger than silicon-hydrogen bonds in glow discharge produced a-Si:H.

• Research Organization: Ames Lab., IA (USA)
• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 6297764
• Report Number(s): IS-T-1309; ON: DE87012073
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
ANNEALING
CHEMICAL REACTIONS
DEPOSITION
ELEMENTS
FILMS
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
HYDROGENATION
LAYERS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SPUTTERING