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A modified photoresist resistant to oxygen plasmas

Journal Article · · Journal of the Electrochemical Society; (USA)
OSTI ID:6419604
; ; ; ;  [1];  [2]
  1. Dept. of Chemistry, Univ. of North Carolina at Charlotte, Charlotte, NC (US)
  2. Microelectronics Center of North Carolina, Research Triangle Park, NC (US)

Conventional photoresists have been modified by the incorporation of a phosphorus-containing compound, {ital i.e.}, phosphonitrilic chloride trimer (P{sub 3}N{sub 3}Cl{sub 6}). The modification was achieved by simply dissolving P{sub 3}N{sub 3}Cl{sub 6} (PNCT) in conventional photoresists. The phosphorus concentration varied from 5 weight percent (w/o) to 12 w/o in the modified photoresist films. These films formed a barrier layer when exposed to oxygen plasmas. After the layer was formed, no measurable resist etch rate could be detected. The resolution and mechanical properties of the modified resist films were essentially unchanged, although an increase by a factor of 1.5 in the exposure threshold was observed. Features of less than 1 {mu}m lines and spaces were anisotropically etched in polyamide masked by this photoresist. Furthermore, metal lift-off structures have been obtained using a bilayer process employing the modified resist.

OSTI ID:
6419604
Journal Information:
Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 137:7; ISSN JESOA; ISSN 0013-4651
Country of Publication:
United States
Language:
English