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Trilayer photoresist definition with high pressure plasmas

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2100823· OSTI ID:5762003

Pattern transfer from a mask plate to a photoresist film by multilayer resist techniques consists of image transfer to a thin photosensitive layer which is separated from a thick underlying organic planarizing layer by an inorganic barrier film. After exposure and development of the imaging photoresist pattern transfer is completed by successively etching the intermediate and planarizing coatings such that the vertical profiles which are defined in the imaging layer are transferred into the lower layers. Reported herein is a two-step etching process which is carried out at high pressure (>1000 mtorr) and low radio frequency (RF) (0.4 mHz) for both steps in a Perkin-Elmer Omni-Etch 10000 single-wafer system.

Research Organization:
Westinghouse Electric Corp., Advanced Technology Lab., Baltimore, MD 21203
OSTI ID:
5762003
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 134:8A; ISSN JESOA
Country of Publication:
United States
Language:
English